Probing the Fermi Surface of 3D Dirac Semimetal Cd$_{3}$As$_{2}$ through de Haas-van Alphen Technique
A. Pariari, P. Dutta, P. Mandal

TL;DR
This study uses quantum oscillation measurements to investigate the Fermi surface of Cd$_{3}$As$_{2}$, revealing multiple Fermi surface features and confirming the presence of 3D Dirac fermions through Berry's phase analysis.
Contribution
It provides detailed Fermi surface characterization of Cd$_{3}$As$_{2}$ using de Haas-van Alphen and Shubnikov-de Haas effects, highlighting multiple Fermi surface cross-sections and non-trivial Berry's phase.
Findings
Detection of quantum oscillations up to 50 K at low fields
Identification of two distinct Fermi surface cross-sections
Confirmation of non-trivial Berry's phase indicating Dirac fermions
Abstract
We have observed Shubnikov-de Haas and de Haas-van Alphen effect in the single crystals of three dimensional Dirac semimetal CdAs upto 50 K, traceable at field as low as 2 T and 1 T, respectively. The values of Fermi wave vector, Fermi velocity, and effective cyclotron mass of charge carrier, calculated from both the techniques, are close to each other and match well with the earlier reports. However, the de Haas-van Alphen effect clearly reflects the existence of two different Fermi surface cross-sections along certain direction and a non-trivial Berry's phase which is the signature of 3D Dirac Fermion in CdAs.
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