Influence of the multiple scattering of relativistic electrons on the line width of the backward Parametric X-ray Radiation in the absence of photo absorption

TL;DR

This paper investigates how multiple scattering of relativistic electrons affects the line width of backward Parametric X-ray Radiation in crystals, showing conditions where photo absorption can be ignored and proposing experiments to better understand scattering effects.

Contribution

It provides theoretical and numerical analysis of multiple scattering effects on PXR line width, highlighting conditions to neglect photo absorption and suggesting experimental validation.

Findings

Multiple scattering broadens PXR lines in specific conditions.

Photo absorption effects can be neglected under certain conditions.

Experimental setups with 30-50 MeV electrons in Si crystals can reveal scattering impacts.

Abstract

The multiple scattering effect on the line width of the backward Parametric X-ray Radiation (PXR) in the extremely Bragg geometry, produced by low energy relativistic electrons traversing a single crystal, is discussed. It is shown that there exist conditions, when the influence of photo absorption on the line width can be neglected, and the only multiple scattering process of relativistic electrons in crystal leads to the PXR lines' broadening. Based on the obtained theoretical and numerical results for the line width broadening, caused by the multiple scattering of $30$ and $50$ MeV relativistic electrons in a Si crystal of varying thicknesses, an experiment could be performed to help to reveal the scattering effect on the PXR lines in the absence of photo absorption. This leads to a more accurate understanding of the influence of scattering phenomenon on the line width of the backward PXR and helps to a better construction of a table-top narrow bandwidth X-ray source for scientific and industrial applications.