Out of equilibrium electrons and the Hall conductance of a Floquet topological insulator

TL;DR

This paper investigates how out-of-equilibrium electrons in irradiated graphene influence the Hall conductance in Floquet topological insulators, highlighting the effects of system openness and laser frequency on quantization.

Contribution

It provides a detailed analysis of Hall conductance in both closed and open Floquet systems, revealing how reservoir coupling and laser frequency affect quantization and electron distribution.

Findings

Closed system shows non-quantized Hall conductance due to non-thermal electron distribution.

Open system coupled to low-temperature phonons approaches quantized conductance at high laser frequencies.

Laser frequency and reservoir temperature critically determine the deviation from the quantum Hall limit.

Abstract

Graphene irradiated by a circularly polarized laser has been predicted to be a Floquet topological insulator showing a laser-induced quantum Hall effect. A circularly polarized laser also drives the system out of equilibrium resulting in non-thermal electron distribution functions that strongly affect transport properties. Results are presented for the Hall conductance for two different cases. One is for a closed system such as a cold-atomic gas where transverse drift due to non-zero Berry curvature can be measured in time of flight measurements. For this case the effect of a circularly polarized laser that has been switched on suddenly is studied. The second is for an open system coupled to an external reservoir of phonons. While for the former, the Hall conductance is far from the quantized limit, for the latter, coupling to a sufficiently low temperature reservoir of phonons is found to produce effective cooling, and thus an approach to the quantum limit, provided the frequency of the laser is large as compared to the band-width. For laser frequencies comparable to the band-width, strong deviations from the quantum limit of conductance is found even for a very low temperature reservoir, with the precise value of the Hall conductance determined by a competition between reservoir induced cooling and the excitation of photo-carriers by the laser. For the closed system, the electron distribution function is determined by the overlap between the initial wavefunction and the Floquet states which can result in a Hall conductance which is opposite in sign to that of the open system.