Dipole-containing encapsulation on WSe2/MoS2 nanoflake p-n diode with glass substrate toward an ideal performance

TL;DR

This study demonstrates that CYTOP encapsulation significantly enhances the performance, stability, and rectification behavior of WSe2/MoS2 p-n diodes on glass substrates, making them promising for advanced electronics.

Contribution

The paper introduces a novel encapsulation method using CYTOP to improve the electrical performance and stability of 2D heterojunction diodes on glass substrates.

Findings

Reduced reverse-bias leakage current.

Enhanced forward-bias current.

Good dynamic rectification at over 100 Hz.

Abstract

We report on p-WSe2/n-MoS2 heterojunction diodes fabricated both on glass and SiO2/p+-Si substrates. The electrostatic performance and stability of our diode were successfully improved toward ideal current-voltage (I-V) behavior by adopting the fluoropolymer CYTOP encapsulation layer on top of our diode; reduction of reverse-bias leakage current and enhancement of forward-bias on current were achieved along with good aging stability in air ambient. Such performance improvement is attributed to the intrinsic properties of CYTOP materials with C-F bonds whose strong dipole moment causes hole accumulation, while the strong hydrophobicity of CYTOP would prevent ambient molecule adsorption on 2D semiconductor surface. Moreover, fabricated on glass, our p-n diode displayed good dynamic rectification at over 100 Hz, without displacement current-induced signal overshoot/undershoot which was shown in the other diode on SiO2/p+-Si. Little I-V hysteresis in our diode is another benefit of glass substrate. We conclude that our CYTOP-encapsulated WSe2/MoS2 p-n diode on glass is a high performance and ambient stable 2D nanodevice toward future advanced electronics.