Temperature controlled motion of an antiferromagnet-ferromagnet interface within a dopant-graded FeRh epilayer

TL;DR

This study demonstrates temperature-controlled motion of an antiferromagnetic-ferromagnetic interface in a dopant-graded FeRh epilayer, enabling tunable magnetic and electronic properties for potential device applications.

Contribution

It introduces a dopant gradient approach to control the phase transition and domain wall movement in FeRh, advancing magnetic interface manipulation techniques.

Findings

Gradual phase transition between 350K and 500K due to doping gradients

Controlled movement of phase boundary domain wall with temperature

Magnetization and resistivity can be tuned via domain wall position

Abstract

Chemically ordered B2 FeRh exhibits a remarkable antiferromagnetic-ferromagnetic phase transition that is first order. It thus shows phase coexistence, usually by proceeding though nucleation at random defect sites followed by propagation of phase boundary domain walls. The transition occurs at a temperature that can be varied by doping other metals onto the Rh site. We have taken advantage of this to yield control over the transition process by preparing an epilayer with oppositely directed doping gradients of Pd and Ir throughout its height, yielding a gradual transition that occurs between 350~K and 500~K. As the sample is heated, a horizontal antiferromagnetic-ferromagnetic phase boundary domain wall moves gradually up through the layer, its position controlled by the temperature. This mobile magnetic domain wall affects the magnetisation and resistivity of the layer in a way that can be controlled, and hence exploited, for novel device applications.