Simulation of Submicrosecond Regimes of High-Voltage Reversibly-Switched Dynistors

TL;DR

This paper uses 2D computer simulations to analyze and improve the submicrosecond pulse performance of high-voltage reversibly-switched dynistors, reducing switching times and increasing current rise rates.

Contribution

It demonstrates how doping reduction in the p-base enhances switching speed and current rise rate in high-voltage RSDs, with specific parameter improvements.

Findings

Switching front duration reduced to 75-100 ns

Current rise rate increased to 20-30 A/cm^2/ns

Energy transfer to load reaches fractions of joules with ~10% power loss

Abstract

Basing on 2D computer simulation of physical processes in high-voltage reversibly-switched dynistors (RSD) important peculiarities of their submicrosecond pulse performance mechanisms have been studied. It is characteristic that on early stages of switching fronts rather great voltage spikes and dangerous delays in current rise are observed. These undesirable manifestations are found to be eliminated due to appropriate reduction of the doping in p-base. Following this way for RSD with blocking voltage of 2.5-5 kV at the value of reversibly pumped charge 5-10 uC/cm^2 one can diminished the switching front duration up to 75-100 ns and lower. As for the current rise rate it can be increased up to (20-30) A/cm^2/ns, i.e., more then the order higher of the similar parameter for the standard RSD. For the switching pulse amplitudes of few unites kA and with the total pulse duration of several hundred nanoseconds the energy transmitted to the load can reach fractions and units of joules per cycle at the power losses in RSD nearly 10% of these values.