High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics

TL;DR

This study investigates the high-temperature electrical behavior of MoS2 thin-film transistors, revealing their functionality up to 500 K, temperature-dependent characteristics, and a novel memory step phenomenon with potential applications in extreme-temperature electronics.

Contribution

It provides the first detailed analysis of MoS2 TFTs at high temperatures, including the discovery of the memory step effect and insights into their temperature-dependent electrical properties.

Findings

Devices remain functional up to 500 K

Memory step occurs at temperatures above 450 K

DC and pulse measurements reveal Joule heating effects

Abstract

The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the DC and pulse measurements shows that the DC sub - linear and super - linear output characteristics of MoS2 thin - films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, an intriguing phenomenon of the "memory step" - a kink in the drain current - occurs at zero gate voltage irrespective of the threshold voltage value. The memory step effect was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The obtained results suggest new applications for MoS2 thin - film transistors in extreme - temperature electronics and sensors.