Nano-artifact metrics based on random collapse of resist

TL;DR

This paper introduces a nano-artifact metric using silicon nanostructures formed by random resist collapse, offering a scalable, high-resolution method for secure authentication resistant to cloning.

Contribution

It presents a novel nano-artifact metric technique based on random resist collapse, achieving sub-10 nm features with conventional lithography for enhanced security.

Findings

Achieves sub-10 nm structural resolution.

Demonstrates high clone-resistance.

Meets security performance criteria.

Abstract

Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications.