Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

TL;DR

This study investigates how the electron Lande g factor in GaAs quantum dots and wells varies with well width, using multiple measurement techniques to understand and control g-factor tuning for quantum device applications.

Contribution

It demonstrates that the quantum well's electron g factor primarily determines the quantum dot's g factor, highlighting well width as a key parameter for g-factor engineering.

Findings

G factor varies with well width in GaAs structures.

Quantum well g factor influences quantum dot g factor.

Well width can be used to tune g factor in quantum devices.

Abstract

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.