Charge and spin transport in a metal-semiconductor heterostructure with double Schottky barriers

TL;DR

This paper models charge and spin transport in a ferromagnet-semiconductor heterostructure with double Schottky barriers, aligning theoretical calculations with experimental data and estimating spin injection efficiency.

Contribution

It introduces a detailed numerical model of a Fe/GaAs/Fe heterostructure with double Schottky barriers, incorporating experimental results to analyze charge and spin transport.

Findings

Numerical current-voltage characteristics match experimental data.

Estimated spin current indicates effective spin injection.

Model provides insights into charge and spin dynamics in heterostructures.

Abstract

Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor.