Incorporation of Mn in Al$_{x}$Ga$_{1-x}$N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations

TL;DR

This study uses advanced spectroscopy, microscopy, and computational methods to analyze how manganese incorporates into AlGaN alloys, revealing its atomic structure, local environment, and effects on material properties.

Contribution

It provides new insights into the atomic and electronic structure of Mn in AlGaN, demonstrating a dilute alloy formation without precipitation up to 82% Al content.

Findings

Mn remains in a dilute state without precipitates up to 82% Al

Mn acts as a surfactant during epitaxial growth

Atomic and electronic structures of Mn are characterized

Abstract

Synchrotron radiation x-ray absorption and emission spectroscopy techniques, complemented by high-resolution transmission electron microscopy methods and density functional theory calculations are employed to investigate the effect of Mn in Al$_{x}$Ga$_{1-x}$N:Mn samples with an Al content up to 100%. The atomic and electronic structure of Mn is established together with its local environment and valence state. A dilute alloy without precipitation is obtained for Al$_{x}$Ga$_{1-x}$N:Mn with Al concentrations up to 82%, and the surfactant role of Mn in the epitaxial process is confirmed.