Effect of traps on the current impulse from X-ray induced conductivity in wide-gap semiconductors

TL;DR

This paper develops a theoretical model to analyze how traps and recombination centers affect the current impulse generated by X-ray induced conductivity in wide-gap semiconductors, considering photon absorption and trap parameters.

Contribution

It introduces a new theoretical framework for calculating current impulses in wide-gap semiconductors with various traps under X-ray irradiation.

Findings

Trap parameters significantly influence current impulse shape and amplitude

Absorption of X-ray photons in ohmic contact semiconductors was characterized

Model provides insights into trap effects on X-ray induced conductivity

Abstract

This article presents a theoretical model for the calculation of the current impulse from X-ray induced conductivity in wide-gap semiconductors that contain different types of traps and recombination centres. The absorption of one X-ray photon in a semiconductor with ohmic contacts was investigated. The influence of the main parameters of the traps and recombination centres on the shape and amplitude of the current impulse was determined.