Precise quantization of anomalous Hall effect near zero magnetic field
A. J. Bestwick, E. J. Fox, Xufeng Kou, Lei Pan, Kang L. Wang, D., Goldhaber-Gordon

TL;DR
This paper demonstrates nearly perfect quantum anomalous Hall effect in a topological insulator thin film with ferromagnetic doping, achieving precise quantization near zero magnetic field and identifying thermal effects as deviations.
Contribution
It reports the first near-ideal quantization of the quantum anomalous Hall effect at zero magnetic field in a three-dimensional topological insulator with ferromagnetic doping.
Findings
Exact quantization within 1 part in 10,000
Longitudinal resistivity under 1 ohm per square
Thermally-activated carriers cause deviations, mitigated by magnetocaloric effect
Abstract
We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per 10,000 and longitudinal resistivity under 1 ohm per square, with chiral edge transport explicitly confirmed by non-local measurements. Deviations from this behavior are found to be caused by thermally-activated carriers, which can be eliminated by taking advantage of an unexpected magnetocaloric effect.
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Taxonomy
TopicsMagnetic Field Sensors Techniques · Computational Physics and Python Applications · Atomic and Subatomic Physics Research
