Temperature driven metal-insulator transition in thin films

TL;DR

This paper investigates how temperature and film thickness influence the metal-insulator transition in thin films, revealing critical parameters and the behavior of electronic states across regimes.

Contribution

It introduces a detailed analysis of temperature and thickness effects on electron delocalization and identifies critical temperature and thickness for phase transition.

Findings

Temperature induces MIT in thin films.

Localization length and conductivity depend on temperature and disorder.

Critical temperature and thickness for delocalization are identified.

Abstract

We present the results of electron delocalization in thin films of finite thickness at finite tem- parature induced by thickness of the film and temparature. The two dimensional results show temparature induced metal-insulator transition (MIT) obtaining both insulating and metallic so- lutions. The localization length in insulating regime and zero frequency conductivity in metallic regime are found to be as a function of temparature and disorder parameter. Similarly, in thin films of finite thickness, delocalization of electronic states takes place induced by temparature as well as film thickness. Further, we could able to get critical temparature Tc for fixed thickness and critical thickness, b_c for fixed temparature. In metallic regime, conductivity is found to be as a function of film thickness, temparature and disorder.