Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

TL;DR

This study demonstrates electrical spin injection and detection in degenerately doped germanium channels integrated on silicon using Mn5Ge3C0.8/Al2O3 contacts, revealing spin accumulation up to 10 K and providing key spin transport parameters.

Contribution

It presents the first integration of spin injection into degenerately doped Ge channels on Si using Mn5Ge3C0.8/Al2O3 contacts with Hanle-effect measurements.

Findings

Spin accumulation observed up to 10 K.

Spin lifetime of 38 ps at 4 K.

Spin diffusion length of 367 nm.

Abstract

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.