Measurements on HV-CMOS Active Sensors After Irradiation to HL-LHC fluences

TL;DR

This paper presents measurements of HV-CMOS sensors irradiated to high fluences, demonstrating their potential suitability for the upgraded, high-radiation environment of the HL-LHC inner detector.

Contribution

It provides experimental data on the radiation tolerance of AMS H18 HV-CMOS sensors up to HL-LHC fluences, highlighting their viability for future detector applications.

Findings

Sensors maintain functionality after high fluence irradiation

HV-CMOS sensors show promising radiation hardness

Results support use in HL-LHC inner detectors

Abstract

During the long shutdown (LS) 3 beginning 2022 the LHC will be upgraded for higher luminosities pushing the limits especially for the inner tracking detectors of the LHC experiments. In order to cope with the increased particle rate and radiation levels the ATLAS Inner Detector will be completely replaced by a purely silicon based one. Novel sensors based on HV-CMOS processes prove to be good candidates in terms of spatial resolution and radiation hardness. In this paper measurements conducted on prototypes built in the AMS H18 HV-CMOS process and irradiated to fluences of up to $2\cdot10^{16}\,\text{n}_\text{eq}\text{cm}^{-2}$ are presented.