Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions

TL;DR

This study investigates magnetoresistance in Ho$_x$Lu$_{1-x}$B$_{12}$, revealing how magnetic clusters and spin density waves influence charge transport, with detailed phase diagram and magnetic structure analysis.

Contribution

It provides a detailed analysis of positive and negative magnetoresistance contributions in Ho$_x$Lu$_{1-x}$B$_{12}$, including magnetic cluster effects and SDW scattering, and reconstructs its magnetic phase diagram.

Findings

Negative MR near Neel temperature caused by scattering on magnetic clusters.

Yosida relation describes negative MR with Langevin magnetization behavior.

Positive quadratic MR component relates to charge carrier scattering and mobility changes.

Abstract

The magnetoresistance (MR) $\Delta \rho/\rho$ of cage-glass compound Ho$_x$Lu$_{1-x}$B$_{12}$ with various concentration of magnetic holmium ions ($x$$\leq$0.5) has been studied in detail concurrently with magnetization M(T) and Hall effect investigations on high quality single crystals at temperatures 1.9-120 K and in magnetic field up to 80 kOe. The undertaken analysis of $\Delta\rho/\rho$ allows us to conclude that the large negative magnetoresistance (nMR) observed in vicinity of Neel temperature is caused by scattering of charge carriers on magnetic clusters of Ho$^{3+}$ ions, and that these nanosize regions with AF exchange inside may be considered as short range order AF domains. It was shown that the Yosida relation $-\Delta \rho/\rho$$\sim$$M^2$ provides an adequate description of the nMR effect for the case of Langevin type behavior of magnetization. Moreover, a reduction of Ho-ion effective magnetic moments in the range 3-9$\mu_B$ was found to develop both with temperature lowering and under the increase of holmium content. A phenomenological description of the large positive quadratic contribution $\Delta \rho/\rho$$\sim$$\mu_D^2 H^2$ which dominates in Ho$_x$Lu$_{1-x}$B$_{12}$ in the intermediate temperature range 20-120 K allows to estimate the drift mobility exponential changes $\mu_D$$\sim$$T^{-a}$ with $a$=1.3-1.6 depending on Ho concentration. An even more comprehensive behavior of magnetoresistance has been found in the AF state of Ho$_x$Lu$_{1-x}$B$_{12}$ where an additional linear positive component was observed and attributed to charge carriers scattering on the spin density wave (SDW). High precision measurements of $\Delta\rho/\rho=f(H,T)$ have allowed us also to reconstruct the magnetic H-T phase diagram of Ho$_{0.5}$Lu$_{0.5}$B$_{12}$ and to resolve its magnetic structure as a superposition of 4f (based on localized moments) and 5d (based on SDW) components.