Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility 3D Dirac Semimetal Cd3As2

TL;DR

This study reveals the complex 3D Fermi surface geometry and ballistic transport properties of Cd3As2, a 3D Dirac semimetal, through angular magnetotransport measurements and quantum limit exploration, highlighting its potential for electronic applications.

Contribution

The paper provides a detailed mapping of the anisotropic Fermi surface and demonstrates quantum limit transport in high mobility Cd3As2, advancing understanding of 3D Dirac semimetals.

Findings

Fermi surface exhibits double period oscillations depending on magnetic field orientation.

Large ballistic transport region with mean free path over sub-millimeter at 6 K.

Quantum limit reached at about 43 T in high magnetic fields.

Abstract

The three-dimensional (3D) topological Dirac semimetal is a new topological phase of matter, viewed as the 3D analogy of graphene with a linear dispersion in the 3D momentum space. Here, we report the angular dependent magnetotransport in Cd3As2 single crystal and clearly show how the Fermi surface evolves when tilting the magnetic field. Remarkably, when the magnetic field lies in [112] and [44-1] axis, only single oscillation period features present, however, the system shows double period oscillations when the field is applied along [1-10] direction. Moreover, tilting the magnetic field at certain direction also gives double period oscillations. We attribute the anomalous oscillation behavior to the sophisticated geometry of Fermi surface and illustrate a complete 3D Fermi surfaces with two nested anisotropic ellipsoids around the Dirac point. Additionally, a sub-millimeter mean free path at 6 K is observed in Cd3As2 crystal, indicating a large ballistic transport region in this material. Tracking the magnetoresistance oscillations to 60 T, we reach the quantum limit (n = 1 Landau Level) at about 43 T. These results improve the knowledge of the Dirac semimetal material Cd3As2, and also pave the way for proposing new electronic applications based on 3D Dirac materials.