Ultrafast Probes of Nonequilibrium Hole Spin Relaxation in Ferromagnetic Semiconductor GaMnAs
Aaron Patz, Tianqi Li, Xinyu Liu, Jacek K. Furdyna, Ilias E. Perakis,, Jigang Wang

TL;DR
This study measures the ultrafast hole spin relaxation times in ferromagnetic GaMnAs using time- and polarization-resolved spectroscopy, revealing a three-step relaxation process and its dependence on magnetic order.
Contribution
It introduces a novel spectroscopy method to directly observe non-equilibrium hole spin dynamics in ferromagnetic semiconductors, providing detailed relaxation times.
Findings
Hole spin relaxation time ~160-200 fs
Three-step relaxation process identified
Hole spin amplitude decreases with temperature
Abstract
We directly measure the hole spin lifetime in ferromagnetic GaMnAs via time- and polarization-resolved spectroscopy. Below the Curie temperature Tc, an ultrafast photoexcitation with linearly-polarized light is shown to create a non-equilibrium hole spin population via the dynamical polarization of holes through p-d exchange scattering with ferromagnetically-ordered Mn spins, and we characterize their relaxation dynamics. The observed relaxation consists of a distinct three-step recovery : (i) femtosecond (fs) hole spin relaxation ~ $160-200 fs, (ii) picosecond (ps) hole energy relaxation ~ 1-2 ps, and (iii) a coherent, damped Mn spin precession with a period of ~ 250 ps. The transient amplitude of the hole spin component diminishes with increasing temperature, directly following the ferromagnetic order, while the hole energy amplitude shows negligible temperature change, consistent…
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