Experience on 3D Silicon Sensors for ATLAS IBL

TL;DR

This paper discusses the development, testing, and qualification of 3D silicon sensors used in the ATLAS IBL detector, highlighting their potential for future upgrades in high-energy physics experiments.

Contribution

It presents practical experience and insights into 3D silicon sensor design and qualification for the ATLAS IBL, and explores future upgrade possibilities for HL-LHC.

Findings

Successful deployment of 3D silicon sensors in ATLAS IBL

Enhanced understanding of sensor fabrication and testing processes

Potential for improved detector performance in future upgrades

Abstract

3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This type of sensors has been developed for the Insertable B-Layer (IBL), an additional pixel layer that has been installed in ATLAS during the present shutdown of the LHC collider at CERN. It is presented here the experience in designing, testing and qualifying sensors and detector modules that have been used to equip part of the IBL. Based on the gained experience with 3D silicon sensors for the ATLAS IBL, we discuss possible new developments for the upgrade of ATLAS and CMS at the high-luminosity LHC (HL-LHC).