First Principles Study of Metal Contacts to Monolayer Black Phosphorous

TL;DR

This study uses density functional theory to analyze metal contacts with monolayer black phosphorous, revealing that palladium forms an ideal Ohmic contact, which is crucial for optimizing transistor performance.

Contribution

It provides a systematic DFT analysis of metal-mBP interfaces, identifying the nature of contacts with gold, titanium, and palladium, and highlighting palladium's suitability for Ohmic contact.

Findings

Gold forms a Schottky barrier with high tunnel barrier.

Palladium creates a purely Ohmic contact with mBP.

Titanium exhibits intermediate contact behavior.

Abstract

Atomically thin layered black phosphorous (BP) has recently appeared as an alternative to the transitional metal di chalcogenides for future channel material in a MOS transistor due to its lower carrier effective mass. Investigation of the electronic property of source/drain contact involving metal and two-dimensional material is essential as it impacts the transistor performance. In this paper we perform a systematic and rigorous study to evaluate the Ohmic nature of the side-contact formed by the monolayer BP (mBP) and metals (gold, titanium and palladium), which are commonly used in experiments. Employing the Density Functional Theory (DFT), we analyse the potential barrier, charge transfer and atomic orbital overlap at the metal-mBP interface in an optimized structure to understand how efficiently carriers could be injected from metal contact to the mBP channel. Our analysis shows that gold forms a Schottky contact with a higher tunnel barrier at the interface in comparison to the titanium and palladium. mBP contact with palladium is found to be purely Ohmic, where as titanium contact demonstrates an intermediate behaviour.