Tunneling transport in a few monolayer-thick WS2/graphene heterojunction
Takehiro Yamaguchi, Rai Moriya, Yoshihisa Inoue, Sei Morikawa, Satoru, Masubuchi, Kenji Watanabe, Takashi Taniguchi, and Tomoki Machida
TL;DR
This study explores the tunneling transport properties of ultrathin WS2/graphene heterojunctions, demonstrating layer-dependent tunnel resistance and barrier characteristics crucial for 2D material-based electronic devices.
Contribution
It provides the first detailed analysis of layer-controlled tunneling behavior and barrier height in WS2/graphene heterostructures with few-monolayer thicknesses.
Findings
WS2 exhibits tunnel barrier characteristics at 2-5 monolayers
Tunnel resistance increases exponentially with WS2 layer number
Barrier height of WS2 is approximately 0.37 eV
Abstract
This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical transport in WS2 and MoS2 TMDs in graphene/TMD/metal heterostructures revealed that WS2 exhibits tunnel barrier characteristics when its thickness is between 2 to 5 monolayers, whereas MoS2 experiences a transition from tunneling to thermionic emission transport with increasing thickness within the same range. Tunnel resistance in a graphene/WS2/metal heterostructure therefore increases exponentially with the number of WS2 layers, revealing the tunnel barrier height of WS2 to be 0.37 eV.
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