Compact Stabilized Semiconductor Laser for Frequency Metrology

TL;DR

This paper presents a compact, stabilized 795 nm semiconductor laser with low noise, high modulation speed, and stability, suitable for frequency metrology applications across various wavelengths.

Contribution

Development of a self-injection locked semiconductor laser with ultra-low noise and high modulation capabilities, demonstrating stability and tunability for precision frequency measurements.

Findings

Residual amplitude modulation below -80 dB

Frequency noise better than 300 Hz/Hz^{1/2}

Frequency stability below 10^{-12}

Abstract

We report on the development of a frequency modulatable 795 nm semiconductor laser based on self-injection locking to a high quality factor whispering gallery mode microresonator. The laser is characterized with residual amplitude modulation below -80 dB and frequency noise better than 300 Hz/Hz^(1/2) at offset frequencies ranging from 100 Hz to 10 MHz. The frequency modulation (FM) speed and span of the laser exceed 1 MHz and 4 GHz, respectively. Locking of the laser to Doppler-free saturated absorption resonance of 87Rb D1 line is demonstrated and frequency stability below 10^(-12) is measured for integration time spanning from 1 s to 1 day. The architecture demonstrated in this study is suitable for realization of frequency modulatable lasers at any wavelength.