Discharge-produced plasma extreme ultraviolet (EUV) source and ultra high vacuum chamber for studying EUV-induced processes

TL;DR

This paper presents an experimental setup for studying EUV-induced processes relevant to lithography, including a plasma source, debris mitigation, optics, and diagnostics, with initial results on plasma parameters and evolution.

Contribution

It introduces a comprehensive EUV experimental setup with in situ diagnostics for detailed study of EUV-induced plasmas in lithography conditions.

Findings

Identification of physical parameters of EUV-induced plasmas

Observation of plasma evolution under EUV exposure

Validation of diagnostic methods for plasma analysis

Abstract

An experimental setup that directly reproduces Extreme UV-lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an UHV experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the physical parameters and evolution of EUV-induced plasmas are presented. Finally, the applicability and accuracy of the in situ diagnostics is briefly discussed.