Shock-waves and commutation speed of memristors

TL;DR

This paper reveals a novel connection between resistive switching in memristors and shock wave formation, providing new physical insights that could enhance the understanding and speed of memristor devices.

Contribution

It introduces a theoretical framework linking shock wave dynamics to memristor switching, validated by simulations and experiments, advancing the understanding of resistive change mechanisms.

Findings

Resistive switching involves shock wave formation of oxygen vacancies.

Shock wave dynamics influence the commutation speed of memristors.

Model validation through experiments on manganese-oxide memristors.

Abstract

Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report the striking result of a connection between the resistive switching and {\em shock wave} formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide based memristor device. The shock wave scenario brings unprecedented physical insight and enables to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect -- the commutation speed.