Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers

TL;DR

This paper demonstrates room-temperature spin-polarized tunneling through atomically thin hexagonal boron nitride barriers in magnetic tunnel junctions, highlighting their potential for 2D spintronic device integration.

Contribution

It provides experimental evidence of spin transport through monolayer h-BN in large-area devices, a novel application of 2D insulators in spintronics.

Findings

Room-temperature tunnel magnetoresistance observed.

Spin-polarized tunneling confirmed across h-BN barriers.

Large-area monolayer h-BN effective in spintronic devices.

Abstract

The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap along with its atomically flat nature without dangling bonds or interface trap states makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer h-BN prepared by chemical vapor deposition in magnetic tunnel junctions. In ferromagnet/h-BN/ferromagnet heterostructures fabricated over a chip scale, we show tunnel magneto resistance at room temperature. Measurements at different bias voltages and on multiple devices with different ferromagnetic electrodes establish the spin polarized tunneling using h-BN barriers. These results open the way for integration of 2D monolayer insulating barriers in active spintronic devices and circuits operating at ambient temperature, and for further exploration of their properties and prospects.