Theory of lifetime of exciton incoherently created below its resonance frequency by inelastic scattering
Motoaki Bamba, Shuji Wakaiki, Hideki Ichida, Kohji Mizoguchi, DaeGwi, Kim, Masaaki Nakayama, and Yasuo Kanematsu

TL;DR
This paper proposes a model for the lifetime of excitons created below their resonance frequency via inelastic scattering, emphasizing the role of coherence volume in the transient exciton state before polariton formation.
Contribution
It introduces a new expression for the P-emission lifetime based on the coherence volume of excitons, providing a different perspective from the immediate polariton creation assumption.
Findings
The exciton remains as a transient state far below resonance energy.
The P-emission lifetime depends on the coherence volume of excitons.
Time-resolved measurements can test the proposed model.
Abstract
When an exciton in semiconductor is scattered and its energy is decreased far below the resonance energy of the bare exciton state, it has been considered that an exciton-polariton is created immediately by the scattering process, because there is no exciton level at that energy. However, according to the recent time-resolved measurements of P emission originating from inelastic exciton-exciton scattering, it looks rather natural to consider that the exciton-polariton is created in a finite time scale which is restricted by a coherence volume of the exciton after the scattering. In this interpretation, the exciton remains in this time scale far below its resonance energy as a transient state in a series of processes. We propose an expression of the P-emission lifetime depending on the coherence volume of the scattered excitons through the conversion process from them to the polaritons.…
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