Microwave power coupling in a surface wave excited plasma

TL;DR

This paper presents an improved design for Microwave sheath-Voltage combination Plasma (MVP) sources that generates over-dense plasma at low microwave powers, with plasma length increasing as input power rises.

Contribution

The study introduces a novel MVP design capable of producing high-density plasma efficiently at lower microwave power levels.

Findings

Plasma length increases with input microwave power.

Over-dense plasma achieved at low microwave power levels.

Enhanced MVP design improves plasma generation efficiency.

Abstract

In recent decades, different types of plasma sources have been used for various types of plasma processing, such as, etching and thin film deposition. The critical parameter for effective plasma processing is high plasma density. One type of high density plasma source is Microwave sheath-Voltage combination Plasma (MVP). In the present investigation, a better design of MVP source is reported, in which over-dense plasma is generated for low input microwave powers. The results indicate that the length of plasma column increases significantly with increase in input microwave power.