Single photon emitters in exfoliated WSe2 structures
M. Koperski, K. Nogajewski, A. Arora, J. Marcus, P. Kossacki, and M., Potemski

TL;DR
This study identifies and characterizes single photon emitters at the edges of exfoliated WSe2 layers, revealing their potential for quantum optoelectronic applications due to sharp emission lines and photon antibunching.
Contribution
It demonstrates the existence of single photon emitters in WSe2 flakes at their edges, linking their optical properties to the material's two-dimensional structure.
Findings
Sharp emission lines with 0.1 meV linewidth observed at edges
Emission exhibits photon antibunching, confirming single photon emission
Optical responses are consistent with two-dimensional properties of WSe2
Abstract
Crystal structure imperfections in solids often act as efficient carrier trapping centers which, when suitably isolated, act as sources of single photon emission. The best known examples of such attractive imperfections are wellwidth or composition fluctuations in semiconductor heterostructures (resulting in a formation of quantum dots) and coloured centers in wide bandgap (e. g., diamond) materials. In the case of recently investigated thin films of layered compounds, the crystal imperfections may logically be expected to appear at the edges of commonly investigated few-layer flakes of these materials, exfoliated on alien substrates. Here, we report on comprehensive optical microspectroscopy studies of thin layers of tungsten diselenide, WSe2, a representative semiconducting dichalcogenide with a bandgap in the visible spectral range. At the edges of WSe2 flakes, transferred onto…
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Taxonomy
Topics2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
