Single Quantum Emitters in Monolayer Semiconductors
Yu-Ming He, G. Clark, J. R. Schaibley, Yu He, M.-C. Chen, Y.-J. Wei,, X. Ding, Qiang Zhang, Wang Yao, Xiaodong Xu, Chao-Yang Lu, and Jian-Wei Pan

TL;DR
This paper introduces a new class of single quantum emitters in monolayer tungsten-diselenide, demonstrating their potential for scalable quantum photonic applications with narrow linewidths and strong photon anti-bunching.
Contribution
It reports the discovery and characterization of defect-localized exciton-based SQEs in 2D materials, a novel class differing from traditional 3D solid-state sources.
Findings
Narrow emission linewidths (~0.13 meV) significantly smaller than delocalized excitons.
Strong photon anti-bunching confirms single-photon emission.
Distinct fine structure with two polarized excitonic modes and a large exchange coupling.
Abstract
Single quantum emitters (SQEs) are at the heart of quantum optics and photonic quantum information technologies. To date, all demonstrated solid-state single-photon sources are confined in three-dimensional materials. Here, we report a new class of SQEs based on excitons that are spatially localized by defects in two-dimensional tungsten-diselenide monolayers. The optical emission from these SQEs shows narrow linewidths of ~0.13 meV, about two orders of magnitude smaller than that of delocalized valley excitons. Second-order correlation measurements reveal strong photon anti-bunching, unambiguously establishing the single photon nature of the emission. The SQE emission shows two non-degenerate transitions, which are cross-linearly polarized. We assign this fine structure to two excitonic eigen-modes whose degeneracy is lifted by a large ~0.71 meV coupling, likely due to the…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum Information and Cryptography · Quantum and electron transport phenomena
