Highly Anisotropic and Robust Excitons in Monolayer Black Phosphorus

TL;DR

This study demonstrates highly anisotropic, tightly bound excitons in monolayer black phosphorus, revealing unique optical properties and large exciton binding energy, with implications for future optoelectronic applications.

Contribution

It provides the first experimental evidence of highly anisotropic bright excitons in monolayer black phosphorus at room temperature.

Findings

Linearly polarized emission along the effective mass direction.

Exciton binding energy estimated at around 0.9 eV.

Quasiparticle bandgap of approximately 2.2 eV.

Abstract

Semi-metallic graphene and semiconducting monolayer transition metal dichalcogenides (TMDCs) are the two-dimensional (2D) materials most intensively studied in recent years. Recently, black phosphorus emerged as a promising new 2D material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. However, current progress is primarily limited to its thin-film form, and its unique properties at the truly 2D quantum confinement have yet to be demonstrated. Here, we reveal highly anisotropic and tightly bound excitons in monolayer black phosphorus using polarization-resolved photoluminescence measurements at room temperature. We show that regardless of the excitation laser polarization, the emitted light from the monolayer is linearly polarized along the light effective mass direction and centers around 1.3 eV, a clear signature of emission from highly anisotropic bright excitons. In addition, photoluminescence excitation spectroscopy suggests a quasiparticle bandgap of 2.2 eV, from which we estimate an exciton binding energy of around 0.9 eV, consistent with theoretical results based on first-principles. The experimental observation of highly anisotropic, bright excitons with exceedingly large binding energy not only opens avenues for the future explorations of many-electron effects in this unusual 2D material, but also suggests a promising future in optoelectronic devices such as on-chip infrared light sources.