Electronic structure of (Ga,Mn)As revisited: an alternative view on the "Battle of the bands"
J. Kanski, L. Ilver, K. Karlsson, M. Leandersson, I. Ulfat, J., Sadowski

TL;DR
This study presents new angle-resolved photoemission data revealing a dispersive, spin-polarized Mn-induced state in (Ga,Mn)As that challenges existing band models for ferromagnetism.
Contribution
It offers an alternative interpretation of the electronic structure of (Ga,Mn)As, disputing current models with new experimental evidence.
Findings
Mn-induced state extends into GaAs band gap
State is highly dispersive
State is spin polarized at room temperature
Abstract
New detailed angle-resolved photoemission data are presented, revealing the existence of an Mn-induced state that extends into the band gap of GaAs. In sharp contrast to recent reports we observe that the state is highly dispersive. Spin resolved photoemission shows that the band is spin polarized even at room temperature. The results are not consistent with any of the currently discussed band models for ferromagnetism.
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Taxonomy
TopicsGa2O3 and related materials · Magnetic properties of thin films · ZnO doping and properties
