High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-gate Electrodes

TL;DR

This paper reports the experimental realization of high-quality BN-Graphene-BN nanoribbon capacitors with graphene side-gate electrodes, demonstrating significant modulation of electronic properties, though negative quantum capacitance was not observed.

Contribution

It introduces a novel experimental setup of BN-Graphene-BN nanoribbon capacitors with double graphene side-gates and analyzes their modulation effects.

Findings

Graphene properties are significantly modulated by side-gates.

Modulation effects follow metallic electrode behavior.

Negative quantum capacitance was not observed.

Abstract

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by the double side-gates. The modulation effects are very obvious and followed the metallic electrode behavior of numerical simulations, while the theoretically predicted negative quantum capacitance was not observed, possibility due to the over-estimated or weakened interactions between the graphene nanoribbon and side-gate electrodes.