Coding scheme for 3D vertical flash memory

TL;DR

This paper proposes a coding scheme that uses intentional inter-cell interference to mitigate fast detrapping in 3D vertical flash memory, improving reliability by leveraging side information during encoding.

Contribution

It introduces a novel coding technique that incorporates side information to control inter-cell interference, effectively compensating for fast detrapping in 3D vertical flash memory.

Findings

The scheme effectively mitigates fast detrapping effects.

Numerical results demonstrate improved memory reliability.

The approach leverages coding with side information for defect management.

Abstract

Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction. However, 3D vertical flash memory suffers from a new problem known as fast detrapping, which is a rapid charge loss problem. In this paper, we propose a scheme to compensate the effect of fast detrapping by intentional inter-cell interference (ICI). In order to properly control the intentional ICI, our scheme relies on a coding technique that incorporates the side information of fast detrapping during the encoding stage. This technique is closely connected to the well-known problem of coding in a memory with defective cells. Numerical results show that the proposed scheme can effectively address the problem of fast detrapping.