Relativistic Neel-order fields induced by electrical current in antiferromagnets

TL;DR

This paper predicts that electrical currents can induce non-equilibrium Neel order fields in antiferromagnets, enabling ultra-fast spin reorientation and potential memory device applications.

Contribution

It introduces the concept of current-induced Neel order fields in antiferromagnets, supported by microscopic transport theory calculations and specific material models.

Findings

Identification of staggered current-induced fields similar to spin-orbit fields in ferromagnets.

Demonstration of potential for ultra-fast spin reorientation.

Proposal of an antiferromagnetic memory device with electrical writing and reading.

Abstract

We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium N\'eel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intra-band and to the intrinsic inter-band spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we considered bulk Mn2Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modelled by a Rashba spin-orbit coupling. We propose an AFM memory device with electrical writing and reading.