Physical Properties of Zener Tunnelling Nano-devices in Graphene

TL;DR

This paper develops an analytical model for the transmission and conductance of graphene Zener tunnelling nano-devices, comparing theoretical predictions with experimental data to understand their electronic properties.

Contribution

It introduces an analytical approach considering charge carrier direction and probability current conservation for graphene Zener tunnelling devices.

Findings

Analytical expressions for current and conductance derived.

Numerical IV characteristics discussed for graphene step and Zener barrier.

Model shows good agreement with experimental results.

Abstract

By considering the direction of charge carriers and the conservation of probablity current the transmission properties of graphene Zener tunnelling nano-devices were obtained. The scattering properties were then used with an adaptation of the Landauer formalism to calculate an analytical expression for current and conductance. The numerical results of the IV characteristics were then briefly discussed for the graphene step and Zener barrier. A comparison between the theoretical model and experimental results shows the similarities of graphene nanoribbons and infinite sheet graphene.