Envelope function method for electrons in slowly-varying inhomogeneously deformed crystals
Wenbin Li, Xiaofeng Qian, Ju Li

TL;DR
This paper introduces a novel envelope-function formalism for modeling electrons in slowly-varying inhomogeneously strained semiconductors, enabling efficient and accurate calculations of electronic states in large, deformed crystal systems.
Contribution
The authors develop a new envelope-function approach using coordinate transformation and strain-parametrized Bloch functions, allowing large-scale simulations of inhomogeneously strained crystals.
Findings
High accuracy in energy eigenstate calculations demonstrated in a 1D model.
Method reduces computational cost compared to direct Hamiltonian diagonalization.
Envelope functions can be fitted empirically to experimental data.
Abstract
We develop a new envelope-function formalism to describe electrons in slowly-varying inhomogeneously strained semiconductor crystals. A coordinate transformation is used to map a deformed crystal back to geometrically undeformed structure with deformed crystal potential. The single-particle Schr\"{o}dinger equation is solved in the undeformed coordinates using envelope function expansion, wherein electronic wavefunctions are written in terms of strain-parametrized Bloch functions modulated by slowly varying envelope functions. Adopting local approximation of electronic structure, the unknown crystal potential in Schr\"{o}dinger equation can be replaced by the strain-parametrized Bloch functions and the associated strain-parametrized energy eigenvalues, which can be constructed from unit-cell level ab initio or semi-empirical calculations of homogeneously deformed crystals at a chosen…
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