Graphene Side Gate Engineering
Ching-Tzu Chen, Tony Low, Hsin-Ying Chiu, and Wenjuan Zhu
TL;DR
This paper investigates how voltage-biasing graphene side gates affects the electrical transport in graphene channels, providing systematic characterization and modeling for various device configurations.
Contribution
It introduces a comprehensive study of electrostatic modulation in graphene devices with different side gate configurations, combining experimental data with modeling.
Findings
Side gates effectively modulate electrostatic doping in graphene.
Transport characteristics are systematically characterized and match the modeling.
Device configurations influence modulation efficiency.
Abstract
Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore myriads of typical side gated devices such as symmetric dual side gates and asymmetric single side gate biasing, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees well with the modeling presented.
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