Spin-orbit interaction in GaAs wells: From one to two subbands
J. Y. Fu, J. Carlos Egues

TL;DR
This study models spin-orbit couplings in GaAs quantum wells, revealing how well width and subband occupancy influence Rashba and Dresselhaus interactions, with implications for spintronic applications.
Contribution
It provides a detailed self-consistent calculation of intra- and inter-subband spin-orbit couplings across single and double occupancy regimes in GaAs wells, including the identification of persistent-spin-helix points.
Findings
Rashba coupling $oldsymbol{ extalpha}_1$ remains constant for narrow wells
Inter-subband Rashba coupling $oldsymbol{ exteta}$ decreases with well width
Persistent-spin-helix symmetry points depend on well width and doping asymmetry
Abstract
We investigate the Rashba and Dresselhaus spin-orbit (SO) couplings in GaAs quantum wells in the range of well widths allowing for a transition of the electron occupancy from one to two subbands. By performing a detailed Poisson-Schr\"odinger self-consistent calculation, we determine all the intra- and inter-subband Rashba (, , ) and Dresselhaus (, , ) coupling strengths. For relatively narrow wells with only one subband occupied, our results are consistent with the data of Koralek \emph{et al.} [Nature \bfs{48}, 610 (2009)], i.e., the Rashba coupling is essentially independent of in contrast to the decreasing linear Dresselhaus coefficient . When we widen the well so that the second subband can also be populated, we observe that decreases and increases, both almost linearly with .…
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Taxonomy
TopicsQuantum and electron transport phenomena · Physics of Superconductivity and Magnetism · Magnetic properties of thin films
