Determining doping efficiency and mobility from conductivity and Seebeck data of n-doped C60 layers

TL;DR

This paper presents models to extract doping efficiency, charge carrier concentration, and mobility from conductivity and Seebeck data of n-doped C60 layers, providing insights into their electronic properties.

Contribution

The work introduces new models for estimating key parameters from conductivity and Seebeck data in doped organic semiconductors, specifically applied to n-doped C60 layers.

Findings

Lower limits for doping efficiency, carrier concentration, and mobility were derived.

The transport level position was narrowed down using combined conductivity and Seebeck data.

Trends for absolute values of electronic parameters were identified.

Abstract

In this work, we introduce models for deriving lower limits for the key parameters doping efficiency, charge carrier concentration, and charge carrier mobility from conductivity data of doped organic semiconductors. The models are applied to data of thin layers of Fullerene C60 n-doped by four different n-dopants. Combining these findings with thermoelectric Seebeck data, the energetic position of the transport level can be narrowed down and trends for the absolute values are derived.