Scalable fabrication of nanostructured p-Si/n-ZnO heterojunctions by femtosecond-laser processing

TL;DR

This paper introduces a scalable femtosecond laser-based method to create nanostructured p-Si/n-ZnO heterojunctions with enhanced electrical properties for potential electronic and optoelectronic applications.

Contribution

It presents a novel large-scale fabrication process combining femtosecond laser processing and pulsed laser deposition to produce nanostructured heterojunctions with improved electrical performance.

Findings

Nanostructured heterojunctions exhibit diode-like I-V characteristics.

Forward current and rectification ratio are significantly improved in nanostructured devices.

The method is adaptable for other homojunctions and heterojunctions in electronic devices.

Abstract

We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered distribution of columnar nanospikes was formed on the surface of the substrates. A thin (80 nm) layer of ZnO was deposited on the laser-processed silicon surface by pulsed laser deposition, forming a nanostructured p-Si/n-ZnO heterojunction. We characterized the structural, optical, and electrical properties of the heterojunction. Electrical I-V measurements on the nanostructured p-Si/n-ZnO device show non-linear electric characteristics with a diode-like behavior. Electrical I-V measurements on a flat p-Si/n-ZnO reference sample show similar characteristics, however the forward current and rectification ratio are improved by orders of magnitude in the nanostructured device. The fabrication method employed in this work can be extended to other homojunctions or heterojunctions for electronic and optoelectronic devices with large surface area.