Finger-gate manipulated quantum transport in Dirac materials

TL;DR

This paper explores how finger-gate potentials influence quantum transport in Dirac material nanoribbons, revealing conductance dips and spin-switch capabilities through quasibound state interactions.

Contribution

It introduces a method to manipulate spin-polarized transport in Dirac materials using finger-gate potentials, highlighting new control mechanisms in quantum transport.

Findings

Conductance dips caused by intra-subband transitions via QBS.

Double dip structures due to spin-flip and non-flip inter-subband transitions.

Finger-gate polarity inversion enables spin-switch control.

Abstract

We investigate the quantum transport properties of multichannel nanoribbons made of materials described by the Dirac equation, under an in-plane magnetic field. In the low energy regime, positive and negative finger-gate potentials allow the electrons to make intra-subband transitions via hole-like or electron-like quasibound states (QBS), respectively, resulting in dips in the conductance. In the high energy regime, double dip structures in the conductance are found, attributed to spin-flip or spin-nonflip inter-subband transitions through the QBSs. Inverting the finger-gate polarity offers the possibility to manipulate the spin polarized electronic transport to achieve a controlled spin-switch.