Black Phosphorus Radio-Frequency Transistors

TL;DR

This paper demonstrates the first high-frequency operation of black phosphorus transistors, showing promising GHz-range performance with high current density and saturation, indicating potential for future nanoelectronic applications.

Contribution

First demonstration of gigahertz frequency operation in black phosphorus transistors with detailed high-frequency performance metrics.

Findings

Achieved a cutoff frequency fT of 12 GHz.

Maximum oscillation frequency fmax of 20 GHz.

High current saturation with on-off ratio over 2000.

Abstract

Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap of around 0.3 eV and high carrier mobility, leading to transistors with decent on-off ratio and high on-state current density. Here, we demonstrate the gigahertz frequency operation of black phosphorus field-effect transistors for the first time. The BP transistors demonstrated here show excellent current saturation with an on-off ratio exceeding 2000. We achieved a current density in excess of 270 mA/mm and DC transconductance above 180 mS/mm for hole conduction. Using standard high frequency characterization techniques, we measured a short-circuit current-gain cut-off frequency fT of 12 GHz and a maximum oscillation frequency fmax of 20 GHz in 300 nm channel length devices. BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus enabling the future ubiquitous transistor technology that can operate in the multi-GHz frequency range and beyond.