Kinetic properties of the two-dimensional conducting system formed by CrSi2 nanocrystallites in plane (111) of silicon
V. V. Andrievskii, Yu. F. Komnik, I. B. Berkutov, I. G. Mirzoiev, N., G. Galkin, and D. L. Goroshko

TL;DR
This study investigates the electrical and magnetic properties of a two-dimensional charge carrier system formed by CrSi2 nanocrystallites in silicon, revealing complex conduction mechanisms and a giant resistivity reduction with current.
Contribution
It introduces a detailed analysis of the kinetic properties of a 2D conducting system in silicon with CrSi2 nanocrystallites, highlighting unusual conduction effects and a novel resistivity reduction phenomenon.
Findings
Charge transport involves complex mechanisms including thermal activation and electron hopping.
Magnetoresistance varies significantly across temperature ranges.
A giant reduction in resistivity with increasing current was observed.
Abstract
The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2 nanocrystallites (NC) in the plane (111). The conduction in such heterostructure proceeds in the plane with the NC and is the conduction of a two-dimensional system of charge carriers that shows some unusual effects. The temperature variation of resistivitymaybe treated as the result of the effect of thermal activation but in this case it is characterized by a low activation energy different in value in different temperature ranges. This suggests that the mechanism of conduction is more complex. It is found that the conduction is determined by the effect of temperature variation not only on carrier concentration but also on its mobility. Magnetoresistivity is also…
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