Spin decoherence in n-type GaAs: the effectiveness of the third-body rejection method for electron-electron scattering

TL;DR

This paper investigates spin decoherence in n-type GaAs at room temperature, demonstrating that the third-body rejection method can effectively model electron-electron scattering effects using Ensemble Monte Carlo simulations.

Contribution

The study adapts the third-body rejection method for Ensemble Monte Carlo simulations to accurately account for electron-electron scattering in spin decoherence analysis.

Findings

Third-body rejection method successfully integrated into Monte Carlo simulations.

Electron-electron interactions significantly influence spin decoherence.

Method provides a new tool for modeling spin dynamics in semiconductors.

Abstract

We study the spin decoherence in n-type bulk GaAs for moderate electronic densities at room temperature using Ensemble Monte Carlo method. We demonstrate that the third-body rejection method devised by Ridley can be successfully adapted to Ensemble Monte Carlo algorithm, and used to tackle the problem of the electron-electron contribution to spin decoherence.