Atomistic Mechanisms of Codoping-Induced p- to n-Type Conversion in Nitrogen-Doped Graphene
Hyo Seok Kim, Han Seul Kim, Seong Sik Kim, Yong-Hoon Kim

TL;DR
This study uses first-principles calculations to explore how codoping nitrogen-doped graphene can switch its electronic type from p- to n-type or bipolar, addressing a key challenge for graphene electronics.
Contribution
It reveals atomistic mechanisms and identifies specific codopants that enable type conversion and defect healing in nitrogen-doped graphene.
Findings
B-, Al-, and P-codoping can repair vacancy defects in p-type NG.
Type conversion depends on nitrogen bonding configuration.
Codoping can restore charge transport properties.
Abstract
It was recently shown that nitrogen-doped graphene (NG) can exhibit both p- and n-type characters depending on the C-N bonding nature, which represents a significant bottleneck for the development of graphene-based electronics. Based on first-principles calculations, we herein scrutinise the correlations between atomic and electronic structures of NG, and particularly explore the feasibility of converting p-type NG with pyridinic, pyrrolic, and nitrilic N into n- or bipolar type by introducing an additional dopant atom. Out of the nine candidates, B, C, O, F, Al, Si, P, S, and Cl, we find that the B-, Al-, and P-codoping can anneal even relatively large vacancy defects in p-type NG. It will be also shown that, while the NG with pyridinic N can be converted into n-type via codoping, only the bipolar type conversion can be achieved for the NG with nitrilic or pyrrolic N. The amount of…
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