Laser Induced Magnetization Reversal for Detection in Optical Interconnects

TL;DR

This paper introduces a novel optical interconnect architecture utilizing laser-induced magnetization reversal in magnetic tunnel junctions, enabling faster and more energy-efficient data transmission at 5 Gbps.

Contribution

It proposes a new optical interconnect design that replaces traditional photodetectors with laser-switched magnetic tunnel junctions for improved speed and energy efficiency.

Findings

Achieves data transfer speed of 5 Gbps.

Reduces energy consumption compared to conventional detectors.

Enables magnetization switching on picosecond timescales.

Abstract

Optical interconnect has emerged as the front-runner to replace electrical interconnect especially for off-chip communication. However, a major drawback with optical interconnects is the need for photodetectors and amplifiers at the receiver, implemented usually by direct bandgap semiconductors and analog CMOS circuits, leading to large energy consumption and slow operating time. In this article, we propose a new optical interconnect architecture that uses a magnetic tunnel junction (MTJ) at the receiver side that is switched by femtosecond laser pulses. The state of the MTJ can be sensed using simple digital CMOS latches, resulting in significant improvement in energy consumption. Moreover, magnetization in the MTJ can be switched on the picoseconds time-scale and our design can operate at a speed of 5 Gbits/sec for a single link.