Multi-level pinning problems for random walks and self-avoiding lattice paths
Pietro Caputo, Fabio Martinelli, Fabio Lucio Toninelli

TL;DR
This paper characterizes the threshold of the wetting transition for generalized pinning problems in random walks and self-avoiding paths, revealing conditions for localization and delocalization based on pinning potentials and variance.
Contribution
It provides a sharp criterion for the wetting transition in pinning models, extending results to self-avoiding paths and connecting to quantum mechanics criteria.
Findings
Localization occurs if $\sigma^{-2}\sum_{j ext{≥}0}(j+1)\epsilon_j extgreater ext{constant}$.
Delocalization occurs if $\sigma^{-2}\sum_{j ext{≥}0}(j+1)\epsilon_j extless ext{constant}$.
Results apply to both random walks and self-avoiding paths in lattice models.
Abstract
We consider a generalization of the classical pinning problem for integer-valued random walks conditioned to stay non-negative. More specifically, we take pinning potentials of the form , where is the number of visits to the state and is a non-negative sequence. Partly motivated by similar problems for low-temperature contour models in statistical physics, we aim at finding a sharp characterization of the threshold of the wetting transition, especially in the regime where the variance of the single step of the random walk is small. Our main result says that, for natural choices of the pinning sequence , localization (respectively delocalization) occurs if (respectively ), for some universal . Our finding is reminiscent of…
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