CTZS Thin Films Grown by a Sequential Deposition of Precursors
Daniel Cruz-Lemus, Miguel Angel Gracia-Pinilla, Mikel Hurtado, Gerardo, Gordillo Guzman, Iver Lauermann

TL;DR
This study compares the structural, optical, and morphological properties of Cu2ZnSnS4 thin films prepared by physical vapor deposition and chemical bath deposition, providing insights into optimized synthesis methods for kesterite nanostructures.
Contribution
It introduces a comparative analysis of two different thin film fabrication techniques for CZTS, highlighting their effects on film properties and potential for nanostructured kesterite synthesis.
Findings
Differences in structural properties between PVD and CBD methods.
Optical and morphological variations observed in the films.
Insights into optimizing synthesis for nanostructured kesterite.
Abstract
A comparative study of the structural, optical and morphological properties of Cu2ZnSnS4 (CZTS) thin films prepared by two different techniques was performed. One consists of sequential evaporation of the elemental metallic precursors under a flux of sulphur supplied by evaporation from an effusion cell (physical vapor deposition-PVD) and the second one is a solution-based chemical route where thin layers of CuS, SnS and ZnS are deposited sequentially by diffusion membrane- assisted chemical bath deposition techniques; the membranes are used to optimize the kinetic growth through a moderate control of the release of the metal into CBD solution by osmosis. The present comparative study is helpful to the synthesis of kesterite nanostructured thin films.
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
