Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures

TL;DR

This study uses convergent beam electron diffraction to analyze how hydrogen affects lattice mismatch and static disorder in GaAs/GaAs1-xNx heterostructures, revealing the roles of composition and strain.

Contribution

It introduces a method to separately measure lattice mismatch and static disorder in hydrogenated and pristine heterostructures at a sub-micron scale.

Findings

Hydrogen incorporation modifies structural properties of GaAs/GaAs1-xNx heterostructures.

The method distinguishes between mismatch and static disorder effects.

Chemical composition and strain influence static disorder independently.

Abstract

Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.